The sensitivity to ESD events of electrostatically driven ohmic RF-MEMS switches under actuated and not-actuated conditions is here investigated. We have found that stiction and charge-trapping phenomena can be induced by EOS/ESD events. Preliminary results on HBM robustness with a good correlation with TLP tests are also reported. Electro-mechanical simulations have been carried out to study how the suspended membrane reacts to electrical overstress. Furthermore, we report on a new stiction mechanism, induced by the dielectric breakdown that can occur between the suspensions and the actuator electrodes, furnishing a possible guide line to a more robust design.

EOS/ESD Sensitivity of Functional rf-MEMS Switches

TAZZOLI, AUGUSTO;PERETTI, VANNI;AUTIZI, ENRICO;MENEGHESSO, GAUDENZIO
2008

Abstract

The sensitivity to ESD events of electrostatically driven ohmic RF-MEMS switches under actuated and not-actuated conditions is here investigated. We have found that stiction and charge-trapping phenomena can be induced by EOS/ESD events. Preliminary results on HBM robustness with a good correlation with TLP tests are also reported. Electro-mechanical simulations have been carried out to study how the suspended membrane reacts to electrical overstress. Furthermore, we report on a new stiction mechanism, induced by the dielectric breakdown that can occur between the suspensions and the actuator electrodes, furnishing a possible guide line to a more robust design.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2436403
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