TAZZOLI, AUGUSTO

TAZZOLI, AUGUSTO  

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Risultati 1 - 20 di 96 (tempo di esecuzione: 0.036 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Reliability of RF-MEMS 2005 TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
A novel fast and versatile temperature measurement system for LDMOS transistors 2005 TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIOZANONI, ENRICO MICROELECTRONICS RELIABILITY - -
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 2005 SOZZA, ALBERTORAMPAZZO, FABIANATAZZOLI, AUGUSTODANESIN, FRANCESCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Factors limiting the High Brightness InGaN LEDs performance at high injection current bias 2005 LEVADA, SIMONEMENEGHINI, MATTEOTAZZOLI, AUGUSTOBUSO, SIMONESPIAZZI, GIORGIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Resistive RF-MEMS Switches Characterization and Reliability 2005 TAZZOLI, AUGUSTOPERETTI, VANNIZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques 2005 SOZZA, ALBERTORAMPAZZO, FABIANATAZZOLI, AUGUSTODANESIN, FRANCESCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
ESD induced damage on ultra-thin gate oxide MOSFETs and its impact on device reliability 2005 CESTER, ANDREAGERARDIN, SIMONETAZZOLI, AUGUSTOPACCAGNELLA, ALESSANDROZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - 2005 IEEE International Reliability Physics Symposium Proceedings
Analysis of triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices 2006 TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIO + - - -
Reliability issues in RF-MEMS switches submitted to cycling and ESD test 2006 TAZZOLI, AUGUSTOPERETTI, VANNIZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
Transmission line pulse (TLP) testing of radio frequency (RF) micro-machined micro-electromechanical systems (MEMS) switches 2006 TAZZOLI, AUGUSTOPERETTI, VANNIZANONI, ENRICOMENEGHESSO, GAUDENZIO - - -
Development of ESD protection structures for BULK and SOI BCD6 technology 2006 TAZZOLI, AUGUSTOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - IEEE Proceedings of the 18th International Symposium on Power Semiconductor Devices and Integrated Circuits
Characterization Issues and ESD Sensitivity of RF-MEMS Switches 2006 TAZZOLI, AUGUSTOPERETTI, VANNIZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
Electrostatic discharge effects in ultrathin gate oxide MOSFETs 2006 CESTER, ANDREAGERARDIN, SIMONETAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIO IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
RF-MEMS Switches Reliability for Long Term Spatial Applications 2007 TAZZOLI, AUGUSTOPERETTI, VANNICELLERE, GIORGIOMENEGHESSO, GAUDENZIO - - -
A review of failure modes and mechanisms of GaN-based HEMT's 2007 ZANONI, ENRICOMENEGHESSO, GAUDENZIODANESIN, FRANCESCAMENEGHINI, MATTEORAMPAZZO, FABIANATAZZOLI, AUGUSTOZANON, FRANCO + - - -
Long Term Actuation Issues of Ohmic RF-MEMS Switches 2007 TAZZOLI, AUGUSTOPERETTI, VANNIMENEGHESSO, GAUDENZIO - - -
High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices 2007 TAZZOLI, AUGUSTODANESIN, FRANCESCARAMPAZZO, FABIANAZANON, FRANCOMENEGHESSO, GAUDENZIO + - - -
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 2007 GERARDIN, SIMONEGRIFFONI, ALESSIOTAZZOLI, AUGUSTOCESTER, ANDREAMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
ESD Robustness of AlGaN/GaN HEMT Devices 2007 TAZZOLI, AUGUSTODANESIN, FRANCESCAZANONI, ENRICOMENEGHESSO, GAUDENZIO - - -
Degradation of GaN HEMT at high drain voltages 2007 MENEGHESSO, GAUDENZIODANESIN, FRANCESCAMENEGHINI, MATTEORAMPAZZO, FABIANATAZZOLI, AUGUSTOZANON, FRANCOZANONI, ENRICO + - - -