Shunt-shunt resistive feedback is used in this paper to design inductorless broadband LNAs in a digital 45 nm CMOS technology. Simulation results show 18 dB gain over a 10 GHz bandwidth, with NF < 3 dB and IIP3 > -7 dBm in-band, while consuming 32 mW from a 1 V supply voltage.

Design of broadband inductorless LNAs in ultra-scaled CMOS technologies

BEVILACQUA, ANDREA;CAMPONESCHI, MATTEO;GEROSA, ANDREA;NEVIANI, ANDREA
2008

Abstract

Shunt-shunt resistive feedback is used in this paper to design inductorless broadband LNAs in a digital 45 nm CMOS technology. Simulation results show 18 dB gain over a 10 GHz bandwidth, with NF < 3 dB and IIP3 > -7 dBm in-band, while consuming 32 mW from a 1 V supply voltage.
Proceedings of the 2008 IEEE International Symposium on Circuits and Systems (ISCAS)
9781424416837
9781424416844
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2436461
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