The sensitivity to EOS/ESD events of stand-alone Ge2Sb2Te5 (GST) alloy structures, heart of phase change memories, is here investigated. Analytical storage elements were tested from 3 ns up to 1 ms TLP regimes, studying the impact of both GST and heater widths on the device robustness, and reliability. It is also demonstrated that ESD phenomena can induce the reset of the memory content whether not properly protected. Finally, the correlation between TLP and MM testing is proposed.

EOS/ESD Sensitivity of Phase-Change-Memories

TAZZOLI, AUGUSTO;GASPERIN, ALBERTO;PACCAGNELLA, ALESSANDRO;MENEGHESSO, GAUDENZIO
2009

Abstract

The sensitivity to EOS/ESD events of stand-alone Ge2Sb2Te5 (GST) alloy structures, heart of phase change memories, is here investigated. Analytical storage elements were tested from 3 ns up to 1 ms TLP regimes, studying the impact of both GST and heater widths on the device robustness, and reliability. It is also demonstrated that ESD phenomena can induce the reset of the memory content whether not properly protected. Finally, the correlation between TLP and MM testing is proposed.
2009
9781585371761
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2437584
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