Role of SILC related traps on channel degradation and drain current noise

In this work we study the oxide and interface degradation affecting the MOSFET driving current capability before Soft or Hard Breakdown of the gate oxide. We analyse the MOSFET DC and 1/f noise characteristics, and their correlation with the traps commonly related to SILC conduction. After Constant Voltage Stress the drain saturation current and the MOSFET transconductance decrease while the Low Frequency Noise increases. Both effects are produced by oxide defects acting as interface traps. By means of Low Frequency Noise measurements we show that part of these traps are involved in both SILC conduction and drain current noise.