In this work we are addressing the threshold voltage instability observed in non volatile nanocrystal memories (NCMs) during the retention experiments under constant applied bias. Such instability derives from the charge motion at the oxide/nitride interface traps of the oxide/nitride/oxide stack employed as control dielectric. We also investigated the impact of temperature on the cell retention properties, showing important and original results that could be attributed to the structure of the control dielectric stack.

Role of Oxide/Nitride Interface Traps on the Nanocrystal Memory Characteristics

GASPERIN, ALBERTO;CESTER, ANDREA;WRACHIEN, NICOLA;PACCAGNELLA, ALESSANDRO;
2007

Abstract

In this work we are addressing the threshold voltage instability observed in non volatile nanocrystal memories (NCMs) during the retention experiments under constant applied bias. Such instability derives from the charge motion at the oxide/nitride interface traps of the oxide/nitride/oxide stack employed as control dielectric. We also investigated the impact of temperature on the cell retention properties, showing important and original results that could be attributed to the structure of the control dielectric stack.
Proceedings of IEEE - International Reliability Physics Symposium - IRPS 2007
1424409195
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2445610
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