RF-MEMS switches will probably be one of the most suitable solutions to achieve the goal of small dimension and low power consuming high frequency reconfigurable networks and wireless communication systems. In literature it is possible to find several interesting studies regarding the actuation performances of RF-MEMS switches, but very few of them analyze the device behavior after the actuation signal has been removed. This lack, together with almost no standardization in the measurement conditions, make critical the comparison of different RF-MEMS devices. One of the most critical issue regarding the reliability of electrostatically actuated RF-MEMS switches is related to charge trapping phenomena. The need of exhaustive measurement setup, and the study of charge trapping mechanisms, are analyzed in this work.

Characterization Issues and Charge Trapping Effects on RF-MEMS switches

TAZZOLI, AUGUSTO;PERETTI, VANNI;MENEGHESSO, GAUDENZIO
2007

Abstract

RF-MEMS switches will probably be one of the most suitable solutions to achieve the goal of small dimension and low power consuming high frequency reconfigurable networks and wireless communication systems. In literature it is possible to find several interesting studies regarding the actuation performances of RF-MEMS switches, but very few of them analyze the device behavior after the actuation signal has been removed. This lack, together with almost no standardization in the measurement conditions, make critical the comparison of different RF-MEMS devices. One of the most critical issue regarding the reliability of electrostatically actuated RF-MEMS switches is related to charge trapping phenomena. The need of exhaustive measurement setup, and the study of charge trapping mechanisms, are analyzed in this work.
2007
16th European Workshop on Heterostructure Technology, HeTech 2007
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2445795
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