We compare the In content of quaternary InxGa1-xAs1-yNy and ternary InxGa1-xAs layers grown by plasma-assisted molecular beam epitaxy in similar conditions. Indium incorporation is found to decrease monotonically with increasing nitrogen content. The magnitude of the reduction strongly depends on N concentration, reaching about 20% of the nominal In content for N concentrations of y=0.044.
Nitrogen-induced hindering of In incorporation in InGaAsN
BISOGNIN, GABRIELE;DE SALVADOR, DAVIDE;BERTI, MARINA;DRIGO, ANTONIO
2006
Abstract
We compare the In content of quaternary InxGa1-xAs1-yNy and ternary InxGa1-xAs layers grown by plasma-assisted molecular beam epitaxy in similar conditions. Indium incorporation is found to decrease monotonically with increasing nitrogen content. The magnitude of the reduction strongly depends on N concentration, reaching about 20% of the nominal In content for N concentrations of y=0.044.
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