The degradation of NMOS and PMOS transistors within CMOS inverters has been analyzed. Channel-hot-carrier (CHC) degradation and/or bias temperature instabilities (BTIs) are identified as aging mechanisms, and their implications at the device and circuit levels are discussed. Device- and circuit-level results have been linked using the BSIM4 SPICE model.
Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters
GERARDIN, SIMONE;PACCAGNELLA, ALESSANDRO;
2009
Abstract
The degradation of NMOS and PMOS transistors within CMOS inverters has been analyzed. Channel-hot-carrier (CHC) degradation and/or bias temperature instabilities (BTIs) are identified as aging mechanisms, and their implications at the device and circuit levels are discussed. Device- and circuit-level results have been linked using the BSIM4 SPICE model.File in questo prodotto:
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