A nanoscale characterisation of the electrical conduction of irradiated thin SiO2 gate oxides of MOS devices has been performed with a conductive atomic force microscope. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Although their I-V characteristics show a leaky behaviour, these locations have not experienced a hard breakdown event.
Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM
CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2005
Abstract
A nanoscale characterisation of the electrical conduction of irradiated thin SiO2 gate oxides of MOS devices has been performed with a conductive atomic force microscope. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Although their I-V characteristics show a leaky behaviour, these locations have not experienced a hard breakdown event.File in questo prodotto:
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