A nanoscale characterisation of the electrical conduction of irradiated thin SiO2 gate oxides of MOS devices has been performed with a conductive atomic force microscope. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Although their I-V characteristics show a leaky behaviour, these locations have not experienced a hard breakdown event.

Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM

CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2005

Abstract

A nanoscale characterisation of the electrical conduction of irradiated thin SiO2 gate oxides of MOS devices has been performed with a conductive atomic force microscope. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Although their I-V characteristics show a leaky behaviour, these locations have not experienced a hard breakdown event.
2005
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2450827
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