We present the results of extensive characterization of fully isolated SOI NPN bipolar protection devices by means of both 2D simulations, DC and TLP measurements, and HBM/TLP ESD stress tests. Excellent agreement between measured and simulated quasistatic and pulsed I-V characteristics of the protection structures has been obtained. We also confirm the usefulness of 2D/3D device simulations for ESD optimization.
Experimental analysis and electro-thermal simulation of low- and high-voltage ESD protection bipolar devices in a Silicon-On-Insulator Bipolar-CMOS-DMOS technology
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2001
Abstract
We present the results of extensive characterization of fully isolated SOI NPN bipolar protection devices by means of both 2D simulations, DC and TLP measurements, and HBM/TLP ESD stress tests. Excellent agreement between measured and simulated quasistatic and pulsed I-V characteristics of the protection structures has been obtained. We also confirm the usefulness of 2D/3D device simulations for ESD optimization.File in questo prodotto:
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