In this work we have addressed oxide and interface degradation as the mechanisms affecting MOSFET performance in terms of transconductance (gm), saturation current (Ids,SAT) and threshold voltage (Vth) before SB and HB. We focused our attention on three points: 1) how interface and oxide trap generation modify the DC MOSFET characteristics; 2) the drain current noise during stress; 3) the correlation between the degradation of DC and noise characteristics and the traps commonly related to SILC conduction.
Degradation of Low Frequency Noise and DC characteristics on MOSFETs and its correlation with SILC
CESTER, ANDREA;GERARDIN, SIMONE;PACCAGNELLA, ALESSANDRO;
2003
Abstract
In this work we have addressed oxide and interface degradation as the mechanisms affecting MOSFET performance in terms of transconductance (gm), saturation current (Ids,SAT) and threshold voltage (Vth) before SB and HB. We focused our attention on three points: 1) how interface and oxide trap generation modify the DC MOSFET characteristics; 2) the drain current noise during stress; 3) the correlation between the degradation of DC and noise characteristics and the traps commonly related to SILC conduction.File in questo prodotto:
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