In this work we have addressed oxide and interface degradation as the mechanisms affecting MOSFET performance in terms of transconductance (gm), saturation current (Ids,SAT) and threshold voltage (Vth) before SB and HB. We focused our attention on three points: 1) how interface and oxide trap generation modify the DC MOSFET characteristics; 2) the drain current noise during stress; 3) the correlation between the degradation of DC and noise characteristics and the traps commonly related to SILC conduction.

Degradation of Low Frequency Noise and DC characteristics on MOSFETs and its correlation with SILC

CESTER, ANDREA;GERARDIN, SIMONE;PACCAGNELLA, ALESSANDRO;
2003

Abstract

In this work we have addressed oxide and interface degradation as the mechanisms affecting MOSFET performance in terms of transconductance (gm), saturation current (Ids,SAT) and threshold voltage (Vth) before SB and HB. We focused our attention on three points: 1) how interface and oxide trap generation modify the DC MOSFET characteristics; 2) the drain current noise during stress; 3) the correlation between the degradation of DC and noise characteristics and the traps commonly related to SILC conduction.
2003
European Solid-state Device Research Conference - ESSDERC 2003
0780379993
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2458738
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