GaN nanocrystals (in the wurtzite phase) were synthesized by sequential implantation of Ga and N ions into either crystalline (quartz, sapphire) or amorphous (silica) dielectrics, followed by annealing of the samples in flowing NH3 gas at 900 degreesC. GaN was formed by reaction of implanted Ga with NH3 combustion products and/or via conversion of Ga oxide/oxynitrides. A blueshift of the near-band-edge photoluminescence (quantum-confinement effect) was observed for GaN nanocrystals with size less than or equal to2-3 nm, present in all the substrates.

Synthesis of GaN quantum dots by ion implantation in dielectrics

MATTEI, GIOVANNI;MAURIZIO, CHIARA;MAZZOLDI, PAOLO;
2001

Abstract

GaN nanocrystals (in the wurtzite phase) were synthesized by sequential implantation of Ga and N ions into either crystalline (quartz, sapphire) or amorphous (silica) dielectrics, followed by annealing of the samples in flowing NH3 gas at 900 degreesC. GaN was formed by reaction of implanted Ga with NH3 combustion products and/or via conversion of Ga oxide/oxynitrides. A blueshift of the near-band-edge photoluminescence (quantum-confinement effect) was observed for GaN nanocrystals with size less than or equal to2-3 nm, present in all the substrates.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2459025
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 49
  • ???jsp.display-item.citation.isi??? 48
social impact