We report on thin-film photodetectors optimized for detecting the vacuum UV and rejection of the visible spectrum of electromagnetic radiation. The devices are made of hydrogenated amorphous silicon and silicon carbide on a glass substrate. At room temperature the photodetectors exhibit quantum efficiencies of 52% at λ = 58.4 nm, 1% at λ = 400 nm, and 0.1% at λ = 650 nm. The response time for UV pulses from an N2 laser gives signals of 6-μs full width at half-maximum and 500-ns rise time. © 1997 Optical Society of America.
Thin - film photodetectors for the vacuum ultraviolet spectral region
NALETTO, GIAMPIERO;NICOLOSI, PIERGIORGIO;
1997
Abstract
We report on thin-film photodetectors optimized for detecting the vacuum UV and rejection of the visible spectrum of electromagnetic radiation. The devices are made of hydrogenated amorphous silicon and silicon carbide on a glass substrate. At room temperature the photodetectors exhibit quantum efficiencies of 52% at λ = 58.4 nm, 1% at λ = 400 nm, and 0.1% at λ = 650 nm. The response time for UV pulses from an N2 laser gives signals of 6-μs full width at half-maximum and 500-ns rise time. © 1997 Optical Society of America.
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