Lattice-matched Zn1-yCdySe/InxGa1-xAs heterojunctions can be fabricated by molecular beam epitaxy on GaAs(001) 2x4 surfaces in a wide range of compositions provided that a suitable strain relaxation profile is achieved within the ternary m-V buffer layer. We focus here on the structural properties of the resulting II-VI/III-V heterostructures and discuss the distribution of native defects, including misfit and threading dislocations, stacking faults, and surface corrugations
Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures
NAPOLITANI, ENRICO;ROMANATO, FILIPPO;DRIGO, ANTONIO;
1998
Abstract
Lattice-matched Zn1-yCdySe/InxGa1-xAs heterojunctions can be fabricated by molecular beam epitaxy on GaAs(001) 2x4 surfaces in a wide range of compositions provided that a suitable strain relaxation profile is achieved within the ternary m-V buffer layer. We focus here on the structural properties of the resulting II-VI/III-V heterostructures and discuss the distribution of native defects, including misfit and threading dislocations, stacking faults, and surface corrugationsFile in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
Native extended defects in Zn1−yCdySeInxGa1−xAs heterostructures.pdf
accesso aperto
Tipologia:
Published (publisher's version)
Licenza:
Accesso libero
Dimensione
1.02 MB
Formato
Adobe PDF
|
1.02 MB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
