We have investigated electrical and optical phenomena related to impact ionization in the near breakdown regime of heterostructure FETs. The experimental analysis is based on electroluminescence spectroscopy correlated to minority carrier gate current measurements. Such experiments are intepreted by means of Monte Carlo simulations.
Experimental and Theoretical studies of near-breakdown phenomena in heterostructure FETs
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
1999
Abstract
We have investigated electrical and optical phenomena related to impact ionization in the near breakdown regime of heterostructure FETs. The experimental analysis is based on electroluminescence spectroscopy correlated to minority carrier gate current measurements. Such experiments are intepreted by means of Monte Carlo simulations.
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