We present a theoretical investigation of the near-breakdown scenario in pseudomorphic High Electron Mobility Transistors (HEMTs). We show that the main mechanism for the enhanced drain current is a parasitic bipolar effect due to holes, generated by impact ionization, which accumulate in the substrate under the source. The dynamic of this charge accumulation and of the consequent drain current increase is studied by means of a 2D Poisson Monte Carlo simulator.
Breakdown triggering in PM-HEMT studied by means of Monte Carlo simulator
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
1999
Abstract
We present a theoretical investigation of the near-breakdown scenario in pseudomorphic High Electron Mobility Transistors (HEMTs). We show that the main mechanism for the enhanced drain current is a parasitic bipolar effect due to holes, generated by impact ionization, which accumulate in the substrate under the source. The dynamic of this charge accumulation and of the consequent drain current increase is studied by means of a 2D Poisson Monte Carlo simulator.File in questo prodotto:
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