GaN nanocrystals (in the wurtzite phase) were synthesized by sequential implantation of Ga and N ions, either crystalline or amorphous dielectrics, followed by annealing of the samples in flowing NH3 gas at 900 degreesC. A blue shift of the near band-edge photoluminescence (quantum confinement effect) is observed for GaN nanocrystals with a size of similar to2-3 nm, formed in the alpha -Al2O3 substrate.

Synthesis, structure and optical properties of GaN nanocrystals prepared by sequential ion implantation in dielectrics

MATTEI, GIOVANNI;MAURIZIO, CHIARA;MAZZOLDI, PAOLO;
2001

Abstract

GaN nanocrystals (in the wurtzite phase) were synthesized by sequential implantation of Ga and N ions, either crystalline or amorphous dielectrics, followed by annealing of the samples in flowing NH3 gas at 900 degreesC. A blue shift of the near band-edge photoluminescence (quantum confinement effect) is observed for GaN nanocrystals with a size of similar to2-3 nm, formed in the alpha -Al2O3 substrate.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2468478
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