In1-xGaxAs buffer layers grown on GaAs(0 0 1) wafers can be used as novel substrates lattice matched to the Zn1-yCdySe active layers employed in blue-green lasers. Photoluminescence studies of Zn1-yCdySe alloys (x = 0.15 and 0.25) grown by molecular beam epitaxy on such substrates show a dramatic reduction in the deep-level emission as compared to Zn1-yCdySe/GaAs(0 0 1) heterostructures. The surface of the epilayers, however, exhibits a cross-hatched morphology as a result of similar to 10 nm deep surface corrugations oriented along perpendicular (1 1 0) directions. (C) 1998 Elsevier Science B.V. All rights reserved.

Lattice-matched Zn1-yCdySe/InxGa1-xAs(001) heterostructures

NAPOLITANI, ENRICO;ROMANATO, FILIPPO;DRIGO, ANTONIO
1998

Abstract

In1-xGaxAs buffer layers grown on GaAs(0 0 1) wafers can be used as novel substrates lattice matched to the Zn1-yCdySe active layers employed in blue-green lasers. Photoluminescence studies of Zn1-yCdySe alloys (x = 0.15 and 0.25) grown by molecular beam epitaxy on such substrates show a dramatic reduction in the deep-level emission as compared to Zn1-yCdySe/GaAs(0 0 1) heterostructures. The surface of the epilayers, however, exhibits a cross-hatched morphology as a result of similar to 10 nm deep surface corrugations oriented along perpendicular (1 1 0) directions. (C) 1998 Elsevier Science B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2473137
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