By means of high resolution x-ray diffraction and photo luminescence measurements we demonstrate that, as a result of hydrogen irradiation of GaAsi.JSTjVGaAs, the original tensile strain of the as-grown material is reversed into a compressive one and that, at the same time, N atoms are electromcally passivated. We show that the amount of compressive strain is determined exclusively by N concentration. This compressive strain is caused by the formation of peculiar N-H complexes and disappears after moderate annealing, while N electronic passivation still holds. These experimental results demonstrate that the lattice properties of fully-hydrogenated GaAsi.JSTj/GaAs are ruled by a H complex which is different and less stable than that responsible for electronic passivation of N in GaAs^JSL/GaAs.
Evidence for a new hydrogen complex in dilute nitride alloys
BISOGNIN, GABRIELE;DE SALVADOR, DAVIDE;NAPOLITANI, ENRICO;BERTI, MARINA;
2007
Abstract
By means of high resolution x-ray diffraction and photo luminescence measurements we demonstrate that, as a result of hydrogen irradiation of GaAsi.JSTjVGaAs, the original tensile strain of the as-grown material is reversed into a compressive one and that, at the same time, N atoms are electromcally passivated. We show that the amount of compressive strain is determined exclusively by N concentration. This compressive strain is caused by the formation of peculiar N-H complexes and disappears after moderate annealing, while N electronic passivation still holds. These experimental results demonstrate that the lattice properties of fully-hydrogenated GaAsi.JSTj/GaAs are ruled by a H complex which is different and less stable than that responsible for electronic passivation of N in GaAs^JSL/GaAs.Pubblicazioni consigliate
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