For the first time, the heavy-ions induced degradation and Single Event Latchup (SEL) are studied in SCR ESD protection structures for space applications. The device degradation strongly depends on the doping profile. A high SEL sensitivity is observed when the devices are used to protect high-voltage (HV) I/O pins.

An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures

GRIFFONI, ALESSIO;TAZZOLI, AUGUSTO;PACCAGNELLA, ALESSANDRO;MENEGHESSO, GAUDENZIO;
2011

Abstract

For the first time, the heavy-ions induced degradation and Single Event Latchup (SEL) are studied in SCR ESD protection structures for space applications. The device degradation strongly depends on the doping profile. A high SEL sensitivity is observed when the devices are used to protect high-voltage (HV) I/O pins.
IEW2011, 2011 International Electrostatic Discharge Workshop
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2477600
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