We subjected Organic Thin-Film-Transistors with different gate dielectrics interface treatment to visible light and low energy UV irradiation. Devices with silicon nanoparticles only feature a remarkable temporary charge trapping, regardless the irradiation wavelength. On the contrary, devices without silicon nanoparticles feature temporary trapped charge under visible light, and permanent mobility degradation if they are irradiated with a wavelength shorter than 420 nm.

Reliability of RF-MEMS switches for efficient Satellite telecommunications

MENEGHESSO, GAUDENZIO;BARBATO, MARCO;GILIBERTO, VALENTINA;ZANONI, ENRICO;
2011

Abstract

We subjected Organic Thin-Film-Transistors with different gate dielectrics interface treatment to visible light and low energy UV irradiation. Devices with silicon nanoparticles only feature a remarkable temporary charge trapping, regardless the irradiation wavelength. On the contrary, devices without silicon nanoparticles feature temporary trapped charge under visible light, and permanent mobility degradation if they are irradiated with a wavelength shorter than 420 nm.
NanotechItaly 2011 - International Conference
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2477888
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