The diffusion and segregation of ion implanted Al in SiO2 and Si layers were studied for several experimental conditions. Al ions were implanted into SiO2, Si and through a SiO2 layer into Si substrates at several energies (80, 300, 650 and 6000 keV) and doses (3.4 x 10(14)-1 x 10(15) cm(-2)), The Al diffusion coefficient in SiO2 was measured at 1200 degrees C for times up to 5 days, and it results five orders of magnitude lower than in Si. The experiments show that the Al atoms implanted into Si do not out-diffuse during thermal treatments from the SiO, capping layer, but segregate at the SiO2/Si interface. The high segregation coefficient gives rise to a trapping of Ai into the oxide layer comparable to the out-diffusion of Al from uncapped Si substrates. The determined parameters for Al diffusion and segregation in the SiO2/Si system were introduced in a simulation code to calculate the Al diffusion profiles which result in agreement with the experimental data.
Ion implantation and diffusion of Al in a SiO2/Si system
GASPAROTTO, ANDREA;CARNERA, ALBERTO;
1996
Abstract
The diffusion and segregation of ion implanted Al in SiO2 and Si layers were studied for several experimental conditions. Al ions were implanted into SiO2, Si and through a SiO2 layer into Si substrates at several energies (80, 300, 650 and 6000 keV) and doses (3.4 x 10(14)-1 x 10(15) cm(-2)), The Al diffusion coefficient in SiO2 was measured at 1200 degrees C for times up to 5 days, and it results five orders of magnitude lower than in Si. The experiments show that the Al atoms implanted into Si do not out-diffuse during thermal treatments from the SiO, capping layer, but segregate at the SiO2/Si interface. The high segregation coefficient gives rise to a trapping of Ai into the oxide layer comparable to the out-diffusion of Al from uncapped Si substrates. The determined parameters for Al diffusion and segregation in the SiO2/Si system were introduced in a simulation code to calculate the Al diffusion profiles which result in agreement with the experimental data.Pubblicazioni consigliate
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