Shallow Donors and Deep Levels In Gaas Grown By Atomic Layer Molecular-beam Epitaxy

We correlate the Si concentration measured by secondary ion mass spectrometry (SIMS) and the net donor concentration in GaAs:Si grown by atomic layer molecular beam epitaxy (ALMBE); Si was supplied during: (a) both the As and the Ga subcycles, (b) the As subcycle, and (c) the Ga subcycle; the layers were grown at temperatures in the 300-530 degrees C range. The results show that Si incorporation and its compensation depend on the Si-supply scheme and that the extent of compensation decreases with the growth temperature. We also study the deep levels in the ALMBE GaAs grown under the above conditions. Our results show the occurrence of M1, M3 and M4 levels with concentrations that are: (i) essentially independent of both the Si supply scheme and the ALMBE growth temperature, (ii) close to those of MBE GaAs grown at 600 degrees C, and (iii) up to 2 orders of magnitude lower than that of GaAs prepared by molecular beam epitaxy (MBE) at similar temperatures.