We investigated the Fe ion implantation and annealing processes used to obtain semi-insulating buried layers in InP epitaxial structures for current confinement in laser device applications. SIMS and RBS-channeling were used as analytical tools. The results show that the annealing is a rather complicated process when the implant causes sample amorphization: high surface reactivity, anomalous dopant diffusion and segregation at damage sites together with inhomogeneous lattice reconstruction are observed.
Ion-implantation and Annealing of Fe For Semiinsulating Layers Formation In Inp
GASPAROTTO, ANDREA;CARNERA, ALBERTO;
1993
Abstract
We investigated the Fe ion implantation and annealing processes used to obtain semi-insulating buried layers in InP epitaxial structures for current confinement in laser device applications. SIMS and RBS-channeling were used as analytical tools. The results show that the annealing is a rather complicated process when the implant causes sample amorphization: high surface reactivity, anomalous dopant diffusion and segregation at damage sites together with inhomogeneous lattice reconstruction are observed.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
