The defect structure in InP, either undoped or n-type, implanted with 2 MeV Fe ions to a dose of either 5 x 10(13) or 2 x 10(14) at cm(-2) and subsequently annealed at the maximum temperature of 750 degrees C has been studied by TEM. The defect structure is very similar for both types of substrate. For the low dose case the as-implanted sample is only partially amorphised and after annealing the primary damage layer is replaced by a band of extrinsic dislocation loops and intrinsic stacking fault tetrahedra. At high implantation dose the as-implanted layer is amorphous and upon annealing only an imperfect solid phase epitaxial regrowth is achieved as a heavily twinned band remains. Below this band extrinsic end of range dislocation loops were detected. The origin of these defects is discussed. (C) 1997 Elsevier Science S.A.
Defect characterization in InP substrates implanted with 2 MeV Fe ions
CARNERA, ALBERTO;GASPAROTTO, ANDREA;
1997
Abstract
The defect structure in InP, either undoped or n-type, implanted with 2 MeV Fe ions to a dose of either 5 x 10(13) or 2 x 10(14) at cm(-2) and subsequently annealed at the maximum temperature of 750 degrees C has been studied by TEM. The defect structure is very similar for both types of substrate. For the low dose case the as-implanted sample is only partially amorphised and after annealing the primary damage layer is replaced by a band of extrinsic dislocation loops and intrinsic stacking fault tetrahedra. At high implantation dose the as-implanted layer is amorphous and upon annealing only an imperfect solid phase epitaxial regrowth is achieved as a heavily twinned band remains. Below this band extrinsic end of range dislocation loops were detected. The origin of these defects is discussed. (C) 1997 Elsevier Science S.A.Pubblicazioni consigliate
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