X-ray and Proton irradiation impact differently on Nanocrystals Memories producing charge loss and permanent degradations of the electrical characteristics. These effects are less pronounced than those ones observed on conventional floating gate based flash memories

Investigation of Proton and X-Ray Irradiation Effects on Nanocrystal and Floating Gate Memory Cell Arrays

WRACHIEN, NICOLA;CESTER, ANDREA;
2008

Abstract

X-ray and Proton irradiation impact differently on Nanocrystals Memories producing charge loss and permanent degradations of the electrical characteristics. These effects are less pronounced than those ones observed on conventional floating gate based flash memories
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2512545
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