We investigated Ferroelectric Random Access Memory subjected to X-ray and proton irradiation. We addressed the radiation damage dependence on irradiation temperature, its stability during annealing and cycling, and the effects of supplied voltage and packaging
Ionizing Radiation Effects on Ferroelectric Non Volatile Memories and its Dependence on the Irradiation Temperature
CESTER, ANDREA;WRACHIEN, NICOLA
2008
Abstract
We investigated Ferroelectric Random Access Memory subjected to X-ray and proton irradiation. We addressed the radiation damage dependence on irradiation temperature, its stability during annealing and cycling, and the effects of supplied voltage and packagingFile in questo prodotto:
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