Non-alloyed Pd/Ge ohmic contacts have been studied for applications to GaAs power metal-semiconductor field effect transistors (MESFETs) and compared with conventional AuGeNi alloyed contacts. The Pd/Ge metallization has a lower contact resistivity with narrower spread than AuGeNi, and the lowest values are obtained when a Ti/Pt/Au overlayer is used. Correspondingly, parasitic source and drain resistances in 0.25 W MESFETs are slightly lower than for AuGeNi metallizations, while similar device characteristics are found in both cases. A Ti/Pt/Au overlayer improves the thermal stability of the Pd/Ge metallization at 300 °C, giving a long-term degradation rate similar to that of AuGeNi contacts. Thermal stability for high temperature device processing was tested at 410 °C, and improved behaviour was found by using a WN/Au overlayer.

Pd/Ge Ohmic Contacts For GaAs Metal-semiconductor Field-effect Transistors - Technology and Performance

PACCAGNELLA, ALESSANDRO;ZANONI, ENRICO;
1990

Abstract

Non-alloyed Pd/Ge ohmic contacts have been studied for applications to GaAs power metal-semiconductor field effect transistors (MESFETs) and compared with conventional AuGeNi alloyed contacts. The Pd/Ge metallization has a lower contact resistivity with narrower spread than AuGeNi, and the lowest values are obtained when a Ti/Pt/Au overlayer is used. Correspondingly, parasitic source and drain resistances in 0.25 W MESFETs are slightly lower than for AuGeNi metallizations, while similar device characteristics are found in both cases. A Ti/Pt/Au overlayer improves the thermal stability of the Pd/Ge metallization at 300 °C, giving a long-term degradation rate similar to that of AuGeNi contacts. Thermal stability for high temperature device processing was tested at 410 °C, and improved behaviour was found by using a WN/Au overlayer.
1990
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2514028
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 19
  • ???jsp.display-item.citation.isi??? 20
  • OpenAlex ND
social impact