A remarkable enhancement by electric field of the detrapping time of electrons from deep donor levels, probably associated with DX centres in the AlGaAs layer, has been directly observed at room temperature in an AlGaAs/GaAs HEMT, whose performance results show to be a function of bias conditions. In particular, detrapping time decreases by one order of magnitude on increasing VDS from 0.5 V to 5 V, moving device response from the linear to the strongly saturated region.
Electron Detrapping Enhanced By Electric-field In Algaas Gaas Hemts
ZANONI, ENRICO;
1990
Abstract
A remarkable enhancement by electric field of the detrapping time of electrons from deep donor levels, probably associated with DX centres in the AlGaAs layer, has been directly observed at room temperature in an AlGaAs/GaAs HEMT, whose performance results show to be a function of bias conditions. In particular, detrapping time decreases by one order of magnitude on increasing VDS from 0.5 V to 5 V, moving device response from the linear to the strongly saturated region.File in questo prodotto:
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