GaAs MESFETs with nonalloyed ohmic contacts, achieved through a solid phase reaction of a Ge/Pd/GaAs (xtl) structure, have been realised and tested at DC and RF. Their contact resistivity and electrical performances are better than those of similar devices with conventional AuGeNi ohmic contacts.

GaAs-MESFETs With Nonalloyed Ohmic Contacts - Technology and Performance

PACCAGNELLA, ALESSANDRO;ZANONI, ENRICO;
1988

Abstract

GaAs MESFETs with nonalloyed ohmic contacts, achieved through a solid phase reaction of a Ge/Pd/GaAs (xtl) structure, have been realised and tested at DC and RF. Their contact resistivity and electrical performances are better than those of similar devices with conventional AuGeNi ohmic contacts.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2514038
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