IR microscopy allows the correlation of anomalous latch-up electrical characteristics with current distribution in CMOS ICs, showing that anomalous behaviour is due to the competition of different pnpn paths and consequent current redistribution.
Correlation Between Anomalous Latch-up I/v Characteristics and Observation of Current Distribution By Ir Microscopy In Cmos Ics
ZANONI, ENRICO;
1988
Abstract
IR microscopy allows the correlation of anomalous latch-up electrical characteristics with current distribution in CMOS ICs, showing that anomalous behaviour is due to the competition of different pnpn paths and consequent current redistribution.File in questo prodotto:
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