Commercial power MESFETs with Ti/W/Au gate metallization show a failure mode consisting of a decrease in I//D //S //S and V//P and an increase in R//O. The failure mechanism was investigated by electrical and structural analysis with SEM, microprobe, and Auger spectrometry, and is found to be thermally activated Au-GaAs interdiffusion, leading to encroachment of the gate metal on the channel. This may be common to all Au-metallized MESFETs and can lead to burn-out of devices.
Gate Metallization Sinking Into the Active Channel In Ti/w/au Metallized Power Mesfets
ZANONI, ENRICO
1986
Abstract
Commercial power MESFETs with Ti/W/Au gate metallization show a failure mode consisting of a decrease in I//D //S //S and V//P and an increase in R//O. The failure mechanism was investigated by electrical and structural analysis with SEM, microprobe, and Auger spectrometry, and is found to be thermally activated Au-GaAs interdiffusion, leading to encroachment of the gate metal on the channel. This may be common to all Au-metallized MESFETs and can lead to burn-out of devices.
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