Two independent failure mechanisms, mainly induced by temperature, were observed in unpassivated, Au-metallized, commercially available power MESFETs. They result in a high gate/source (drain) leakage and in an increase in the open channel resistance, and may explain the 'burn-out' of the devices in practical applications.

Degradation Mechanisms Induced By Temperature In Power Mesfets

ZANONI, ENRICO
1985

Abstract

Two independent failure mechanisms, mainly induced by temperature, were observed in unpassivated, Au-metallized, commercially available power MESFETs. They result in a high gate/source (drain) leakage and in an increase in the open channel resistance, and may explain the 'burn-out' of the devices in practical applications.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2514050
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