We report experimental data on the increase in the output conductance in p-buffer depletion-mode MESFET's showing that this effect occurs at the onset of impact ionization in the channel of the device. This effect was already observed in enhancement-mode MESFET's, and was attributed to a Parasitic Bipolar Effect (PBE) triggered by the injection of impact-ionization-generated holes in the p-buffer. We perform numerical simulations demonstrating that this interpretation is correct, and that the PBE can occur in more general conditions than indicated in previous studies.
Measurement and Simulation of P-buffer Mesfets In Impact Ionization Regime
NEVIANI, ANDREA;ZANONI, ENRICO
1994
Abstract
We report experimental data on the increase in the output conductance in p-buffer depletion-mode MESFET's showing that this effect occurs at the onset of impact ionization in the channel of the device. This effect was already observed in enhancement-mode MESFET's, and was attributed to a Parasitic Bipolar Effect (PBE) triggered by the injection of impact-ionization-generated holes in the p-buffer. We perform numerical simulations demonstrating that this interpretation is correct, and that the PBE can occur in more general conditions than indicated in previous studies.
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