A new method for the evaluation of the dc base parasitic resistance, R(B), of bipolar transistors is described. The method is based on impact-ionization-induced base current reversal and enables R(B) to be evaluated independently from the emitter parasitic resistance in a wide range of emitter current and collector-base voltage, without requiring any special device structure. The method can also extract R(B) in impact-ionization regime, where current crowding due to negative base current induces an increase in R(B) at increasing emitter current.

Extraction of Dc Base Parasitic Resistance of Bipolar-transistors Based On Impact-ionization-induced Base Current Reversal

ZANONI, ENRICO
1993

Abstract

A new method for the evaluation of the dc base parasitic resistance, R(B), of bipolar transistors is described. The method is based on impact-ionization-induced base current reversal and enables R(B) to be evaluated independently from the emitter parasitic resistance in a wide range of emitter current and collector-base voltage, without requiring any special device structure. The method can also extract R(B) in impact-ionization regime, where current crowding due to negative base current induces an increase in R(B) at increasing emitter current.
1993
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2514325
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 9
  • ???jsp.display-item.citation.isi??? 7
social impact