A new method for the evaluation of the dc base parasitic resistance, R(B), of bipolar transistors is described. The method is based on impact-ionization-induced base current reversal and enables R(B) to be evaluated independently from the emitter parasitic resistance in a wide range of emitter current and collector-base voltage, without requiring any special device structure. The method can also extract R(B) in impact-ionization regime, where current crowding due to negative base current induces an increase in R(B) at increasing emitter current.
Extraction of Dc Base Parasitic Resistance of Bipolar-transistors Based On Impact-ionization-induced Base Current Reversal
ZANONI, ENRICO
1993
Abstract
A new method for the evaluation of the dc base parasitic resistance, R(B), of bipolar transistors is described. The method is based on impact-ionization-induced base current reversal and enables R(B) to be evaluated independently from the emitter parasitic resistance in a wide range of emitter current and collector-base voltage, without requiring any special device structure. The method can also extract R(B) in impact-ionization regime, where current crowding due to negative base current induces an increase in R(B) at increasing emitter current.File in questo prodotto:
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