A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.

New Method For Extracting Collector Series Resistance of Bipolar-transistors

ZANONI, ENRICO
1993

Abstract

A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.
1993
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2514327
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