Ionization phenomena in AlGaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.
Impact Ionization Phenomena In AlGaAs/GaAs HBTs
ZANONI, ENRICO;
1992
Abstract
Ionization phenomena in AlGaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.File in questo prodotto:
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