Ionization phenomena in AlGaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.

Impact Ionization Phenomena In AlGaAs/GaAs HBTs

ZANONI, ENRICO;
1992

Abstract

Ionization phenomena in AlGaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.
1992
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2514332
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