We present the first data on rapid degradation of electrical characteristics induced by hot electrons in AlGaAs/GaAs HEMTs. Degradation can be attributed to deep levels generated in the access region between gate and drain contacts possibly at the interfaces between GaAs cap layer and SiN passivation and/or the semiconductor layers in the gate-drain region.
Hot-electron Induced Degradation In AlGaAs/GaAs HEMTs
PACCAGNELLA, ALESSANDRO;ZANONI, ENRICO
1992
Abstract
We present the first data on rapid degradation of electrical characteristics induced by hot electrons in AlGaAs/GaAs HEMTs. Degradation can be attributed to deep levels generated in the access region between gate and drain contacts possibly at the interfaces between GaAs cap layer and SiN passivation and/or the semiconductor layers in the gate-drain region.File in questo prodotto:
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