Impact ionization phenomena accompanied by light emission in the 1.1-3.1 eV energy range take place in GaAs MESFETS and in AlGaAs/GaAs HEMTS at high drain voltages. The dominant mechanism for the emission of photons with h-nu > E(g) is the recombination between impact ionization generated holes and channel electrons.
Hot-carrier-induced Photon-emission In Submicron GaAs Devices
ZANONI, ENRICO;
1992
Abstract
Impact ionization phenomena accompanied by light emission in the 1.1-3.1 eV energy range take place in GaAs MESFETS and in AlGaAs/GaAs HEMTS at high drain voltages. The dominant mechanism for the emission of photons with h-nu > E(g) is the recombination between impact ionization generated holes and channel electrons.
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