This paper reports gate current vrs source potential curves for GaAs MESFETs. Numerical simulations were performed to yield the longitudinal electric field profile in the device channel. Recessed gate MESFETs were simulated using a two-dimensional Drift-Diffusion program. The ionization coefficient was evaluated and an estimate of the ionization current was attempted.
Impact Ionization Phenomena In GaAs-MESFETs - Experimental Results and Simulations
NEVIANI, ANDREA;ZANONI, ENRICO;
1992
Abstract
This paper reports gate current vrs source potential curves for GaAs MESFETs. Numerical simulations were performed to yield the longitudinal electric field profile in the device channel. Recessed gate MESFETs were simulated using a two-dimensional Drift-Diffusion program. The ionization coefficient was evaluated and an estimate of the ionization current was attempted.File in questo prodotto:
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