GaAs MESFET's passivated with PECVD SiN show a lower surface-state density in comparison with SiO passivated devices, as deduced from g(m)(f) dispersion curves. Lower carrier multiplication due to impact ionization phenomena in the active channel and consequently a higher breakdown voltage are observed in SiO passivated samples. These effects are attributed to a lower peak electric field near the drain edge of the gate, deriving from an accumulation of negative surface charge.
Correlation Between Surface-state Density and Impact Ionization Phenomena In Gaas-mesfets
PACCAGNELLA, ALESSANDRO;ZANONI, ENRICO;
1991
Abstract
GaAs MESFET's passivated with PECVD SiN show a lower surface-state density in comparison with SiO passivated devices, as deduced from g(m)(f) dispersion curves. Lower carrier multiplication due to impact ionization phenomena in the active channel and consequently a higher breakdown voltage are observed in SiO passivated samples. These effects are attributed to a lower peak electric field near the drain edge of the gate, deriving from an accumulation of negative surface charge.File in questo prodotto:
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