We present a detailed investigation of hot carrier induced impact ionization and light emission in submicron GaAs MESFETs and AlGaAs/GaAs HEMTs demonstrating that emission of photons with hv > Eg is mainly caused by recombination between channel electrons and holes generated by impact ionization.
High-energy Photon-emission In GaAs-MESFETs and AlGaAs/GaAs HEMTs
ZANONI, ENRICO;PACCAGNELLA, ALESSANDRO;
1991
Abstract
We present a detailed investigation of hot carrier induced impact ionization and light emission in submicron GaAs MESFETs and AlGaAs/GaAs HEMTs demonstrating that emission of photons with hv > Eg is mainly caused by recombination between channel electrons and holes generated by impact ionization.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
