This communication describes a detailed experimental investigation of light emitted from AlGaAs/GaAs high electron mobility transistors biased at high drain voltages where impact ionization occurs. We present the electroluminescence spectra in 1.1-3.1 eV energy range. The strong correlation of the integrated intensity of photons with hv > 1.7 eV with the product of hole current generated by impact ionization and of electron current indicates that the recombination process is the main mechanism for visible light emission.
Impact Ionization, Recombination, and Visible-light Emission In Algaas/gaas High Electron-mobility Transistors
ZANONI, ENRICO;PACCAGNELLA, ALESSANDRO;
1991
Abstract
This communication describes a detailed experimental investigation of light emitted from AlGaAs/GaAs high electron mobility transistors biased at high drain voltages where impact ionization occurs. We present the electroluminescence spectra in 1.1-3.1 eV energy range. The strong correlation of the integrated intensity of photons with hv > 1.7 eV with the product of hole current generated by impact ionization and of electron current indicates that the recombination process is the main mechanism for visible light emission.
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