It is shown that the dominant emission mechanism of photons with high energy (hv > E(g)) in GaAs MESFETs is the recombination of channel electrons with holes generated by impact ionisation. Accordingly, the intensity of emitted visible light is proportional to the product of the electron and hole currents and therefore to recombination rate.
Correlation Between Impact Ionization, Recombination and Visible-light Emission In Gaas-mesfets
ZANONI, ENRICO;PACCAGNELLA, ALESSANDRO;
1991
Abstract
It is shown that the dominant emission mechanism of photons with high energy (hv > E(g)) in GaAs MESFETs is the recombination of channel electrons with holes generated by impact ionisation. Accordingly, the intensity of emitted visible light is proportional to the product of the electron and hole currents and therefore to recombination rate.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
