Techniques based on IR emission microscopy and scanning laser microscopy have been applied to the study of electrostatic discharge phenomena in input/output structures of integrated circuits. Results show that both dielectric shorts in MOS devices and surface electrothermomigration effects can be detected. In particular it is shown that OBIC analyses, conventionally employed to detect junction spiking or junction defects can also easily identify the location of oxide failure in MOS transistors.
Optical studies of electrostatic discharge phenomena in input/output structures
ZANONI, ENRICO;
1990
Abstract
Techniques based on IR emission microscopy and scanning laser microscopy have been applied to the study of electrostatic discharge phenomena in input/output structures of integrated circuits. Results show that both dielectric shorts in MOS devices and surface electrothermomigration effects can be detected. In particular it is shown that OBIC analyses, conventionally employed to detect junction spiking or junction defects can also easily identify the location of oxide failure in MOS transistors.
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