The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide shorts in MOS transistors to be detected and localized, and confirms results of electrical measurements performed on failed devices. The technique is completely non-destructive and can be applied to a large number of MOS gate oxide failures due to breakdown phenomena.
A study of ESD- induced defects in high-voltage nMOS and pMOS transistors
ZANONI, ENRICO;
1992
Abstract
The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide shorts in MOS transistors to be detected and localized, and confirms results of electrical measurements performed on failed devices. The technique is completely non-destructive and can be applied to a large number of MOS gate oxide failures due to breakdown phenomena.File in questo prodotto:
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