The effects of constant current stress and Co-60 gamma irradiation on MOS capacitors with tunnel oxide have been investigated. The thin tunnel oxide is one of the topic steps of Flash EEPROM memories technological process. Two different device technologies have been used. We have observed a qualitative agreement between the results obtained with the two methods, indicating that also radiation testing can be a valuable tool to investigate the quality of thin tunnel oxide layers. Copyright (C) 1996 Elsevier Science Ltd.
Electrical and radiation tests of thin tunnel oxides
PACCAGNELLA, ALESSANDRO;ZANONI, ENRICO;
1996
Abstract
The effects of constant current stress and Co-60 gamma irradiation on MOS capacitors with tunnel oxide have been investigated. The thin tunnel oxide is one of the topic steps of Flash EEPROM memories technological process. Two different device technologies have been used. We have observed a qualitative agreement between the results obtained with the two methods, indicating that also radiation testing can be a valuable tool to investigate the quality of thin tunnel oxide layers. Copyright (C) 1996 Elsevier Science Ltd.File in questo prodotto:
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