Because of the role played by the border regions, minimum-size MOSFETs respond differently to heavy ions than large-area devices. Though the observed effects are not very large, they clearly indicate that heavyion strikes on minimum-size MOSFETs are expected to have a more and more severe impact as the feature size is scaled into the decananometer range.
Electrical modifications induced by heavy-ion strikes on minimum-size MOSFETs
M. Bagatin;CESTER, ANDREA;A. Paccagnella;
2006
Abstract
Because of the role played by the border regions, minimum-size MOSFETs respond differently to heavy ions than large-area devices. Though the observed effects are not very large, they clearly indicate that heavyion strikes on minimum-size MOSFETs are expected to have a more and more severe impact as the feature size is scaled into the decananometer range.
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