Hot-electron-induced light emission and impact ionization in GaAs-based devices

In this paper, we characterize impact ionization effects in GaAs MESFETs, in AlGaAs/GaAs High Electron Mobility Transistors, HEMTs, in AlGaAs/InGaAs Pseudo-Morphic High Electron Mobility Transistors, PM-HEMTs, and AlGaAs/GaAs Heterojunction Bipolar Transistors, HBTs. Then, we correlate impact ionization and electroluminescence in each type of device, providing a deeper insight into the mechanisms responsible for the emission of photons in the high electric field regime. Finally, conclusions follow in Section 4.